IXP CVD

Production-proven performance and flexible architecture for thermal metal CVD films

The IXP CVD single wafer process system offers excellent film uniformity, film composition control, and repeatability with the unique combination of multi-zone showerhead and high temperature capability. With high throughput and low CoO, the IXP CVD systems enables high volume manufacturing (HVM) with >90% availability in semiconductor fabs.

Key Features

Multi-zone showerhead with zone control
Modular single-wafer process module architecture (up to four precess modules) with state-of-the-art control systems
High temperature process >600°C
High quality thermal CVD films with no plasma damage to the substrate
High-vacuum configuration available to prevent film oxidation

IXP CVD APPLICATIONS

LOGIC

Silicides and silicidation films
Diffusion barrier films
Metallic seed layers
Sacrificial hardmask/patterning metal films

NAND

Diffusion barrier films
Poly-adhesion layers
Sacrificial hardmask/patterning metal films

DRAM

Diffusion barrier films
Poly and contact adhesion films
Metallic seed layers
Sacrificial hardmask/patterning metal films