QXP ALD
The next-generation in HVM ALD performance, results, and cost-efficiency
The single-wafer multi-station QXP ALD product offers a production-proven platform with superior device results, performance, throughput and reliability for high volume manufacturing. The unique combination of multiple sources, including vaporizers integrated with multi-plenum showerhead designs, enables multi-component metal and Hi-k film deposition. The results are excellent step coverage, within-wafer uniformity of key film properties, and precise composition control.
Key Features
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Multi-stations per process module, combined with station-to-station process isolation, results in film performance equivalent to single wafer tools and enhanced throughput
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High temperature capability >630°C
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Comprehensive, modular chemical delivery system
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Efficient footprint, low cost-of-ownership, and low cost-of-consumables
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Unique multi-plenum showerhead designs to ensure precursor isolation for multi-component film deposition
QXP ALD APPLICATIONS
LOGIC
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Tunable WF metal gates
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Doped High-k gate oxides
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Diffusion barrier films
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Sacrificial hardmask/ patterning films
NAND
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Doped blocking oxides
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Conformal metal
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Diffusion barrier films
DRAM
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Bitline and conformal buried word line metal diffusion barrier films
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High workfunction conformal capacitor electrodes with high density
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Doped and/or multi-layered High-k capacitor stacks deposited in-situ